PHD12N10E MOSFET Transistor

The PHD12N10E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD12N10E transistor as follows.

PHD12N10E Transistor Specification

Transistor Code		PHD12N10E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT428
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.16Ohm
Power Dissipation (Maximum)	PD	75W
Operating Junction Temperature (Maximum)		150°C

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