PHD108NQ03LT MOSFET Transistor

The PHD108NQ03LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHD108NQ03LT transistor as follows.

PHD108NQ03LT Transistor Specification

Transistor Code		PHD108NQ03LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0075Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		580pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		102nS
Gate-Threshold Voltage (Maximum)		2V

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