PHB73N06T MOSFET Transistor

The PHB73N06T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB73N06T transistor as follows.

PHB73N06T Transistor Specification

Transistor Code		PHB73N06T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	73A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	166W
Drain-Source Capacitance		421pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		79nS
Gate-Threshold Voltage (Maximum)		4V

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