PHB6N60E MOSFET Transistor

The PHB6N60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB6N60E transistor as follows.

PHB6N60E Transistor Specification

Transistor Code		PHB6N60E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT404
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	5.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.8Ohm
Power Dissipation (Maximum)	PD	125W
Operating Junction Temperature (Maximum)		150°C

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