PHB65N06LT MOSFET Transistor

The PHB65N06LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB65N06LT transistor as follows.

PHB65N06LT Transistor Specification

Transistor Code		PHB65N06LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT404
Drain-Source Voltage (Maximum)	VDS	55V
Drain Current (Maximum)	ID	63A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	150W
Operating Junction Temperature (Maximum)		150°C

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