PHB23NQ10LT MOSFET Transistor

The PHB23NQ10LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB23NQ10LT transistor as follows.

PHB23NQ10LT Transistor Specification

Transistor Code		PHB23NQ10LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	98W
Drain-Source Capacitance		129pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		120nS
Gate-Threshold Voltage (Maximum)		2V

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