PHB225NQ04T MOSFET Transistor

The PHB225NQ04T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB225NQ04T transistor as follows.

PHB225NQ04T Transistor Specification

Transistor Code		PHB225NQ04T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0031Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		1390pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		82nS
Gate-Threshold Voltage (Maximum)		4V

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