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PHB222NQ04LT MOSFET Transistor

The PHB222NQ04LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB222NQ04LT transistor as follows.

Circuit diagram symbol of the PHB222NQ04LT transistor

PHB222NQ04LT Transistor Specification

Transistor Code PHB222NQ04LT
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 15V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0028Ohm
Power Dissipation (Maximum) PD 300W
Drain-Source Capacitance 1400pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 268nS
Gate-Threshold Voltage (Maximum) 2V

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