PHB21N06LT MOSFET Transistor

The PHB21N06LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB21N06LT transistor as follows.

PHB21N06LT Transistor Specification

Transistor Code		PHB21N06LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT404
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	56W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		9.4nC

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