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PHB20NQ20T MOSFET Transistor

The PHB20NQ20T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB20NQ20T transistor as follows.

Circuit diagram symbol of the PHB20NQ20T transistor

PHB20NQ20T Transistor Specification

Transistor Code PHB20NQ20T
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.13Ohm
Power Dissipation (Maximum) PD 150W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 65nC

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