PHB193NQ06T MOSFET Transistor

The PHB193NQ06T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB193NQ06T transistor as follows.

PHB193NQ06T Transistor Specification

Transistor Code		PHB193NQ06T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.004Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		1054pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		51nS
Gate-Threshold Voltage (Maximum)		4V

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