PHB153NQ08LT MOSFET Transistor

The PHB153NQ08LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB153NQ08LT transistor as follows.

PHB153NQ08LT Transistor Specification

Transistor Code		PHB153NQ08LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0055Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		840pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		144nS
Gate-Threshold Voltage (Maximum)		2V

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