PHB152NQ03LTA MOSFET Transistor

The PHB152NQ03LTA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB152NQ03LTA transistor as follows.

PHB152NQ03LTA Transistor Specification

Transistor Code		PHB152NQ03LTA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.004Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		1040pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		87nS
Gate-Threshold Voltage (Maximum)		2V

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