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PHB145NQ06T MOSFET Transistor

The PHB145NQ06T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB145NQ06T transistor as follows.

Circuit diagram symbol of the PHB145NQ06T transistor

PHB145NQ06T Transistor Specification

Transistor Code PHB145NQ06T
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK
Drain-Source Voltage (Maximum) VDS 55V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.006Ohm
Power Dissipation (Maximum) PD 250W
Drain-Source Capacitance 785pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 46nS
Gate-Threshold Voltage (Maximum) 4V

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