PHB143NQ04T MOSFET Transistor

The PHB143NQ04T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB143NQ04T transistor as follows.

PHB143NQ04T Transistor Specification

Transistor Code		PHB143NQ04T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0052Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		710pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		51nS
Gate-Threshold Voltage (Maximum)		4V

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