PHB129NQ04LT MOSFET Transistor

The PHB129NQ04LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB129NQ04LT transistor as follows.

PHB129NQ04LT Transistor Specification

Transistor Code		PHB129NQ04LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.005Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		635pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		145nS
Gate-Threshold Voltage (Maximum)		2V

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