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PHB125N06LT MOSFET Transistor

The PHB125N06LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB125N06LT transistor as follows.

Circuit diagram symbol of the PHB125N06LT transistor

PHB125N06LT Transistor Specification

Transistor Code PHB125N06LT
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT404
Drain-Source Voltage (Maximum) VDS 55V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.008Ohm
Power Dissipation (Maximum) PD 250W
Operating Junction Temperature (Maximum) 175°C

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