PHB11N06LT MOSFET Transistor

The PHB11N06LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB11N06LT transistor as follows.

PHB11N06LT Transistor Specification

Transistor Code		PHB11N06LT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	10.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.13Ohm
Power Dissipation (Maximum)	PD	33W
Drain-Source Capacitance		55pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		64nS
Gate-Threshold Voltage (Maximum)		2V

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