PHB112N06T MOSFET Transistor

The PHB112N06T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB112N06T transistor as follows.

PHB112N06T Transistor Specification

Transistor Code		PHB112N06T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		720pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		94nS
Gate-Threshold Voltage (Maximum)		4V

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