PH5525L MOSFET Transistor

The PH5525L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PH5525L transistor as follows.

PH5525L Transistor Specification

Transistor Code		PH5525L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LFPAK
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	81.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0055Ohm
Power Dissipation (Maximum)	PD	62.5W
Drain-Source Capacitance		500pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		55nS
Gate-Threshold Voltage (Maximum)		2.15V
Total Gate Charge		16.6nC

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