PH3855L MOSFET Transistor

The PH3855L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PH3855L transistor as follows.

PH3855L Transistor Specification

Transistor Code		PH3855L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LFPAK
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.036Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		125pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		93nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		11.7nC

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