PH1955L MOSFET Transistor

The PH1955L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PH1955L transistor as follows.

PH1955L Transistor Specification

Transistor Code		PH1955L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LFPAK
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0173Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		217pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		180nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		18nC

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