PE636BA MOSFET Transistor

The PE636BA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PE636BA transistor as follows.

PE636BA Transistor Specification

Transistor Code		PE636BA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDFN3X3P
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	17.8W
Drain-Source Capacitance		139pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS

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