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PE618DT MOSFET Transistor

The PE618DT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PE618DT transistor as follows.

Circuit diagram symbol of the PE618DT transistor

PE618DT Transistor Specification

Transistor Code PE618DT
Transistor Type MOSFET
Control Channel Type N-Channel
Package PDFN3X3S
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 23A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.016Ohm
Power Dissipation (Maximum) PD 16W
Operating Junction Temperature (Maximum) 150°C

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