PE606BA MOSFET Transistor

The PE606BA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PE606BA transistor as follows.

PE606BA Transistor Specification

Transistor Code		PE606BA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDFN3X3P
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	17W
Drain-Source Capacitance		64pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS

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