PE5G6EA MOSFET Transistor

The PE5G6EA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PE5G6EA transistor as follows.

PE5G6EA Transistor Specification

Transistor Code		PE5G6EA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDFN3X3P
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	72A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0024Ohm
Power Dissipation (Maximum)	PD	22W
Drain-Source Capacitance		643pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		58nS

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