PE5A1BA MOSFET Transistor

The PE5A1BA is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PE5A1BA transistor as follows.

PE5A1BA Transistor Specification

Transistor Code		PE5A1BA
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		PDFN3X3P
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	43A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	20W
Drain-Source Capacitance		551pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		53nS

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