PE507BA MOSFET Transistor

The PE507BA is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PE507BA transistor as follows.

PE507BA Transistor Specification

Transistor Code		PE507BA
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		PDFN3X3P
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	28A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	16W
Drain-Source Capacitance		365pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		24nS

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