PDPM6N20V3 MOSFET Transistor

The PDPM6N20V3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PDPM6N20V3 transistor as follows.

PDPM6N20V3 Transistor Specification

Transistor Code		PDPM6N20V3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN2X2-6L
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		75pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		3.3nC

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