PDNM6UT20V05 MOSFET Transistor

The PDNM6UT20V05 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PDNM6UT20V05 transistor as follows.

PDNM6UT20V05 Transistor Specification

Transistor Code		PDNM6UT20V05
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-363
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.34Ohm
Power Dissipation (Maximum)	PD	0.3W
Drain-Source Capacitance		28pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.5nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		1.64nC

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