PDM6UT20V08E MOSFET Transistor

The PDM6UT20V08E is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PDM6UT20V08E transistor as follows.

PDM6UT20V08E Transistor Specification

Transistor Code		PDM6UT20V08E
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SOT-363
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.5Ohm
Power Dissipation (Maximum)	PD	0.17W
Drain-Source Capacitance		23pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1.1V

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