PB600BA MOSFET Transistor

The PB600BA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PB600BA transistor as follows.

PB600BA Transistor Specification

Transistor Code		PB600BA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDFN2X2S
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	1.7W
Drain-Source Capacitance		103pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		37nS

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