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PB5G2JU MOSFET Transistor

The PB5G2JU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PB5G2JU transistor as follows.

Circuit diagram symbol of the PB5G2JU transistor

PB5G2JU Transistor Specification

Transistor Code PB5G2JU
Transistor Type MOSFET
Control Channel Type N-Channel
Package TDFN2X3-6
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0095Ohm
Power Dissipation (Maximum) PD 2.4W
Drain-Source Capacitance 216pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 42nS

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