PB555BA MOSFET Transistor

The PB555BA is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PB555BA transistor as follows.

PB555BA Transistor Specification

Transistor Code		PB555BA
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		PDFN2X2S
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	2.7W
Drain-Source Capacitance		133pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS

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