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PB554DY MOSFET Transistor

The PB554DY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PB554DY transistor as follows.

Circuit diagram symbol of the PB554DY transistor

PB554DY Transistor Specification

Transistor Code PB554DY
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN2X5
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.01Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 283pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 51nS

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