PB521BX MOSFET Transistor

The PB521BX is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PB521BX transistor as follows.

PB521BX Transistor Specification

Transistor Code		PB521BX
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		PDFN2X2S
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.021Ohm
Power Dissipation (Maximum)	PD	2.1W
Drain-Source Capacitance		179pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		21nS

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