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PB210HV MOSFET Transistor

The PB210HV is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PB210HV transistor as follows.

Circuit diagram symbol of the PB210HV transistor

PB210HV Transistor Specification

Transistor Code PB210HV
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOP8
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.23Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 53pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS
Gate-Threshold Voltage (Maximum) 2V

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