PB210BD MOSFET Transistor

The PB210BD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PB210BD transistor as follows.

PB210BD Transistor Specification

Transistor Code		PB210BD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.23Ohm
Power Dissipation (Maximum)	PD	41W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		330nS

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