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PA410BD MOSFET Transistor

The PA410BD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PA410BD transistor as follows.

Circuit diagram symbol of the PA410BD transistor

PA410BD Transistor Specification

Transistor Code PA410BD
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.14Ohm
Power Dissipation (Maximum) PD 35W
Drain-Source Capacitance 50pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 60nS

UXPython is not the creator or an official representative of the PA410BD MOSFET transistor. You can download the official PA410BD MOSFET transistor datasheet to get more infromation about this transistor.

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