PA110BDA MOSFET Transistor

The PA110BDA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PA110BDA transistor as follows.

PA110BDA Transistor Specification

Transistor Code		PA110BDA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.105Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		52pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS

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