P8010BIS MOSFET Transistor

The P8010BIS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P8010BIS transistor as follows.

P8010BIS Transistor Specification

Transistor Code		P8010BIS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	46W
Drain-Source Capacitance		68pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		48nS

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