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P8010BD MOSFET Transistor

The P8010BD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P8010BD transistor as follows.

Circuit diagram symbol of the P8010BD transistor

P8010BD Transistor Specification

Transistor Code P8010BD
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 15A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.085Ohm
Power Dissipation (Maximum) PD 46W
Drain-Source Capacitance 68pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 48nS

UXPython is not the creator or an official representative of the P8010BD MOSFET transistor. You can download the official P8010BD MOSFET transistor datasheet to get more infromation about this transistor.

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