P8008BV MOSFET Transistor

The P8008BV is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P8008BV transistor as follows.

P8008BV Transistor Specification

Transistor Code		P8008BV
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		93pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.8nS
Gate-Threshold Voltage (Maximum)		3V

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