P8008BDA MOSFET Transistor

The P8008BDA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P8008BDA transistor as follows.

P8008BDA Transistor Specification

Transistor Code		P8008BDA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.068Ohm
Power Dissipation (Maximum)	PD	39W
Drain-Source Capacitance		68pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS

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