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P6402FMG MOSFET Transistor

The P6402FMG is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P6402FMG transistor as follows.

Circuit diagram symbol of the P6402FMG transistor

P6402FMG Transistor Specification

Transistor Code P6402FMG
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT23
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.064Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 115pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 3.2nS

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