P6015CDG MOSFET Transistor

The P6015CDG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P6015CDG transistor as follows.

P6015CDG Transistor Specification

Transistor Code		P6015CDG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	48W
Drain-Source Capacitance		725pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		115nS

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