P6010DTG MOSFET Transistor

The P6010DTG is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P6010DTG transistor as follows.

P6010DTG Transistor Specification

Transistor Code		P6010DTG
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		320pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		87nS

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