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P6010DTG MOSFET Transistor

The P6010DTG is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P6010DTG transistor as follows.

Circuit diagram symbol of the P6010DTG transistor

P6010DTG Transistor Specification

Transistor Code P6010DTG
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 27A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.06Ohm
Power Dissipation (Maximum) PD 83W
Drain-Source Capacitance 320pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 87nS

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