P6010DDG MOSFET Transistor

The P6010DDG is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P6010DDG transistor as follows.

P6010DDG Transistor Specification

Transistor Code		P6010DDG
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		224pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS

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