P6003QEA MOSFET Transistor

The P6003QEA is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P6003QEA transistor as follows.

P6003QEA Transistor Specification

Transistor Code		P6003QEA
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		PDFN3X3P
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.024Ohm
Power Dissipation (Maximum)	PD	15W
Operating Junction Temperature (Maximum)		150°C

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