P6002OAG MOSFET Transistor

The P6002OAG is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P6002OAG transistor as follows.

P6002OAG Transistor Specification

Transistor Code		P6002OAG
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SOT23-6
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	1.14W
Operating Junction Temperature (Maximum)		150°C

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